The SSM3J317T(TE85L,F) is a surface mount N-channel transistor with a maximum drain to source voltage of 20V and continuous drain current of 3.6A. It features a maximum power dissipation of 700mW and an on-resistance of 107mR. The device is packaged in a TO-236-3 case and is available in a cut tape package. The SSM3J317T(TE85L,F) is compliant with RoHS regulations.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J317T(TE85L,F) technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 390pF |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 107mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3J317T(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM3J317T(TE85L,F) to view detailed technical specifications.
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