P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 4A continuous drain current. This single-element silicon transistor utilizes U-MOS VI process technology and is housed in a 3-pin SOT-23F lead-frame SMT package with flat leads for surface mounting. Key specifications include a maximum gate threshold voltage of 1V, a low drain-source on-resistance of 55mΩ at 4.5V, and a typical gate charge of 10.4nC at 4.5V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2000mW.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J331R technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23F
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.8
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
0.95
Package Weight (g)
0.011
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS VI
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4A
Material
Si
Maximum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
630@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J331R Datasheet
Download the complete datasheet for Toshiba SSM3J331R to view detailed technical specifications.
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