P-channel MOSFET, 30V Drain to Source Voltage, 4A Continuous Drain Current. Features 71mΩ Rds On Max, 136mΩ Drain to Source Resistance, and 280pF Input Capacitance. Packaged in SOT-23-3 for surface mounting, this RoHS compliant component operates from -55°C to 150°C with a 1W power dissipation.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Toshiba SSM3J334R,LF technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 136mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 71mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3J334R,LF Datasheet
Download the complete datasheet for Toshiba SSM3J334R,LF to view detailed technical specifications.
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