N-channel Silicon MOSFET, small signal, enhancement mode, single element. Features 30V drain-source voltage, 1.3A continuous drain current, and 120mOhm maximum drain-source resistance at 4V. Housed in a 3-pin S-Mini surface-mount plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates from -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM3K01F(T5LCANO-O technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
1.3A
Material
Si
Maximum Drain Source Resistance
120@4VmOhm
Typical Input Capacitance @ Vds
152@10VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba SSM3K01F(T5LCANO-O Datasheet
Download the complete datasheet for Toshiba SSM3K01F(T5LCANO-O to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.