N-channel enhancement mode silicon MOSFET for small signal applications. Features a 30V drain-source voltage, 1A continuous drain current, and 200mΩ maximum drain-source resistance at 4V. Housed in a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates across a wide temperature range of -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K02F(T5LWMATU) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
1A
Material
Si
Maximum Drain Source Resistance
200@4VmOhm
Typical Input Capacitance @ Vds
115@10VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba SSM3K02F(T5LWMATU) Datasheet
Download the complete datasheet for Toshiba SSM3K02F(T5LWMATU) to view detailed technical specifications.
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