This Toshiba SSM3K123TU,LF N-CHANNEL JFET features a maximum continuous drain current of 4.2A and a drain to source voltage of 20V. The device has a maximum drain to source resistance of 28mR and a maximum power dissipation of 500mW. It is packaged in a surface mount package and is RoHS compliant. The operating temperature range is not specified.
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Toshiba SSM3K123TU,LF technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.7mm |
| Input Capacitance | 1.01nF |
| Length | 2mm |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Width | 1.7mm |
| RoHS | Compliant |
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