The SSM3K309T(TE85L,F) is a single N-channel MOSFET from Toshiba with a maximum drain current of 4.7A and a maximum drain to source voltage of 20V. It has a maximum power dissipation of 700mW and is packaged in a TO-236-3 surface mount package. The device is RoHS compliant and suitable for use in a variety of applications. The SSM3K309T(TE85L,F) has a maximum drain to source resistance of 30mR and a maximum Rds on of 31mR, with turn-on and turn-off delay times of 23ns and 34ns, respectively.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Toshiba SSM3K309T(TE85L,F) technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 1V |
| Input Capacitance | 1.02nF |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3K309T(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM3K309T(TE85L,F) to view detailed technical specifications.
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