N-channel Silicon MOSFET, designed for automotive applications. Features a 20V drain-source voltage and 0.25A continuous drain current. This single-element transistor is housed in a 3-pin VESM package, a lead-frame SMT type with a 0.4mm pin pitch, 1.2mm length, and 0.8mm width. Operating temperature range is -55°C to 150°C.
PackageVESM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K37MFV technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | VESM |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.2 |
| Package Width (mm) | 0.8 |
| Seated Plane Height (mm) | 0.5 |
| Pin Pitch (mm) | 0.4 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.25A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 12@10VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3K37MFV Datasheet
Download the complete datasheet for Toshiba SSM3K37MFV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.