N-Channel MOSFET, U-MOSVI FET, featuring 20V Drain to Source Breakdown Voltage (Vdss) and 800mA Continuous Drain Current (ID). Offers a low Drain to Source On-Resistance (Rds On) of 235mR and an Input Capacitance of 55pF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Designed for surface mount applications, this single-element transistor is supplied in tape and reel packaging.
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Toshiba SSM3K56FS,LF technical specifications.
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 840mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 55pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Rds On Max | 235mR |
| RoHS | Compliant |
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