The SSM3K7002BFU,LF is a single N-channel MOSFET with a maximum drain to source voltage of 60V and a continuous drain current of 200mA. It has a maximum power dissipation of 300mW and a drain to source resistance of 2.1 ohms. This device is packaged in a tape and reel format with 3000 pieces per reel. It operates over a wide temperature range and is suitable for use in various applications.
Capacitance1.7E-11F
PolarityN-CHANNEL
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Technical Specifications
Toshiba SSM3K7002BFU,LF technical specifications.
General
| Capacitance | 1.7E-11F |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 60V |
| Max Power Dissipation | 300mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Series | SSM3K7002 |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3K7002BFU,LF Datasheet
Download the complete datasheet for Toshiba SSM3K7002BFU,LF to view detailed technical specifications.
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