N-channel enhancement mode MOSFET, dual configuration, designed for surface mounting. Features 30V drain-source voltage, 0.1A continuous drain current, and a 5-pin USV (SOT-353) package with gull-wing leads. This small signal transistor offers a maximum drain-source resistance of 4000 mOhm at 4V and typical input capacitance of 7.8pF at 3V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5N15FU(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
USV
Lead Shape
Gull-wing
Pin Count
5
PCB
5
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
0.65
Package Weight (g)
0.006
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-353
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
4000@4VmOhm
Typical Input Capacitance @ Vds
7.8@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM5N15FU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM5N15FU(TE85L,F) to view detailed technical specifications.
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