N-channel enhancement mode silicon MOSFET, dual common source configuration. Features 20V drain-source voltage and 0.1A continuous drain current. Packaged in a 5-pin ESV SOT lead-frame SMT with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. Operates from -55°C to 150°C.
PackageESV
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM5N16FE(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | ESV |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.55 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Common Source |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 3000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.3@3VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM5N16FE(BRA) Datasheet
Download the complete datasheet for Toshiba SSM5N16FE(BRA) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.