N-channel MOSFET, 20V Drain-Source Voltage, 0.1A Continuous Drain Current, and 1.1V Gate Threshold Voltage. This dual common source transistor features a 5-pin ESV surface-mount package with a 0.5mm pin pitch, measuring 1.6mm x 1.2mm x 0.55mm. Constructed from silicon, it offers a maximum Drain-Source On-Resistance of 3000 mOhm at 4V and a typical input capacitance of 9.3pF at 3V. Operating temperature range is -55°C to 150°C.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5N16FE(TPL3) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
ESV
Lead Shape
Flat
Pin Count
5
PCB
5
Package Length (mm)
1.6
Package Width (mm)
1.2
Package Height (mm)
0.55
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Common Source
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Gate Threshold Voltage
1.1V
Maximum Drain Source Resistance
3000@4VmOhm
Typical Input Capacitance @ Vds
9.3@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM5N16FE(TPL3) Datasheet
Download the complete datasheet for Toshiba SSM5N16FE(TPL3) to view detailed technical specifications.
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