The SSM5N16FUTE85LF is a Toshiba p-MOSVI transistor with a maximum drain to source voltage of 20V and continuous drain current of 100mA. It features a maximum drain to source resistance of 5.2 ohms and a maximum power dissipation of 200mW. The transistor is packaged in a SOT-353-5 surface mount package and is available in quantities of 3000 per reel. It operates over a temperature range of -40°C to 125°C.
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Toshiba SSM5N16FUTE85LF technical specifications.
| Package/Case | SOT-353-5 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 5.2R |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 1.1V |
| Input Capacitance | 9.3pF |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3R |
| Series | p-MOSVI |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 70ns |
| RoHS | Compliant |
Download the complete datasheet for Toshiba SSM5N16FUTE85LF to view detailed technical specifications.
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