The SSM6J207FE,LF is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 1.4A and a maximum power dissipation of 500mW. The device is packaged in a SOT-563-6 surface mount package and is suitable for use in a variety of applications. The SSM6J207FE,LF has a drain to source resistance of 191mR and a gate to source voltage of 20V. It is not radiation hardened.
Toshiba SSM6J207FE,LF technical specifications.
| Package/Case | SOT-563-6 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Resistance | 191mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 137pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 251mR |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
No datasheet is available for this part.
