P-channel enhancement mode MOSFET, silicon, featuring a 20V drain-source voltage and 3.4A continuous drain current. This surface-mount transistor utilizes a compact 6-pin ES package with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. Key electrical characteristics include a maximum drain-source resistance of 59 mOhm at 4.5V and a typical gate charge of 10.4 nC at 4.5V. Operating across a wide temperature range from -55°C to 150°C, this single element device is built with U-MOS VI process technology.
PackageES
MountingSurface Mount
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Technical Specifications
Toshiba SSM6J215FE technical specifications.
General
| Package/Case | ES |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Weight (g) | 0.003 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VI |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 3.4A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM6J215FE Datasheet
Download the complete datasheet for Toshiba SSM6J215FE to view detailed technical specifications.
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