
P-channel MOSFET, surface mount, 6-pin UF package (2mm x 1.7mm x 0.7mm). Features 30V drain-source voltage, 2.5A continuous drain current, and ±20V gate-source voltage. Offers low on-resistance of 73mΩ at 10V. Operates from -55°C to 150°C.
Toshiba SSM6J401TU technical specifications.
| Package Family Name | UF |
| Package/Case | UF |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Package Weight (g) | 0.007 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Drain Source Resistance | 73@10VmOhm |
| Typical Gate Charge @ Vgs | 16@10VnC |
| Typical Gate Charge @ 10V | 16nC |
| Typical Input Capacitance @ Vds | 730@15VpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba SSM6J401TU to view detailed technical specifications.
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