P-channel MOSFET for surface mount applications. Features a continuous drain current of 10A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 15.3mΩ at a gate-to-source voltage of 8V. Maximum power dissipation is 1W, with an input capacitance of 2.6nF. Packaged in tape and reel for automated assembly.
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Toshiba SSM6J501NU,LF technical specifications.
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.6nF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 15.3mR |
| RoHS | Compliant |
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