The SSM6J501NU,LF(T is a surface mount power MOSFET from Toshiba with a maximum drain current of 10A and a maximum drain to source voltage of 20V. It features a maximum power dissipation of 1W and an on-resistance of 15.3 milliohms. This device is packaged in a DFN package and is RoHS compliant. It is suitable for use in a variety of applications including power supplies and motor control circuits.
Sign in to ask questions about the Toshiba SSM6J501NU,LF(T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba SSM6J501NU,LF(T technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 2.6nF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 15.3mR |
| RoHS Compliant | Yes |
| RoHS | Not Compliant |
Download the complete datasheet for Toshiba SSM6J501NU,LF(T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
