The SSM6J501NU,LF(T is a surface mount power MOSFET from Toshiba with a maximum drain current of 10A and a maximum drain to source voltage of 20V. It features a maximum power dissipation of 1W and an on-resistance of 15.3 milliohms. This device is packaged in a DFN package and is RoHS compliant. It is suitable for use in a variety of applications including power supplies and motor control circuits.
Toshiba SSM6J501NU,LF(T technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 2.6nF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 15.3mR |
| RoHS Compliant | Yes |
| RoHS | Not Compliant |
Download the complete datasheet for Toshiba SSM6J501NU,LF(T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.