The SSM6J505NU,LF is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 12A and a drain to source breakdown voltage of -12V. The device also features a drain to source resistance of 61mR and a gate to source voltage of 6V. It is designed for surface mount applications and has a maximum power dissipation of 1.25W.
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Toshiba SSM6J505NU,LF technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 61mR |
| Drain to Source Voltage (Vdss) | 12V |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 2.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 12mR |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba SSM6J505NU,LF Datasheet
Download the complete datasheet for Toshiba SSM6J505NU,LF to view detailed technical specifications.
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