
The SSM6J505NU,LF is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 12A and a drain to source breakdown voltage of -12V. The device also features a drain to source resistance of 61mR and a gate to source voltage of 6V. It is designed for surface mount applications and has a maximum power dissipation of 1.25W.
Sign in to ask questions about the Toshiba SSM6J505NU,LF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba SSM6J505NU,LF technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 61mR |
| Drain to Source Voltage (Vdss) | 12V |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 2.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 12mR |
| RoHS | Not Compliant |
Download the complete datasheet for Toshiba SSM6J505NU,LF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
