The SSM6J53FETE85LF is a P-channel FET from Toshiba with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 500mW and a drain to source breakdown voltage of 20V. The device features a continuous drain current of 1.8A and a drain to source resistance of 136mR. It is available in a surface mount package and is suitable for use in a variety of applications.
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Toshiba SSM6J53FETE85LF technical specifications.
General
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 136mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 568pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 136mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6J53FETE85LF Datasheet
Download the complete datasheet for Toshiba SSM6J53FETE85LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.