N-channel enhancement mode silicon MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 4.2A maximum continuous drain current. Housed in a compact 6-pin UF surface-mount package with dimensions of 2mm x 1.7mm x 0.7mm and a 0.65mm pin pitch. Offers a low drain-source on-resistance of 28mΩ at 4V Vgs. Operates across a temperature range of -55°C to 150°C.
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Toshiba SSM6K403TU(LF) technical specifications.
| Package/Case | UF |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.007 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 4.2A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 28@4VmOhm |
| Typical Gate Charge @ Vgs | 16.8@4VnC |
| Typical Input Capacitance @ Vds | 1050@10VpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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