N-channel Silicon MOSFET, dual configuration, surface mount with 6-pin ES package. Features 20V drain-source voltage, 0.1A continuous drain current, and ±10V gate-source voltage. Maximum gate threshold voltage is 1.1V, with 3000 mOhm drain-source resistance at 4V. Operates from -55°C to 150°C with 150mW maximum power dissipation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba SSM6N16FE(TPL3,F) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | ES |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Weight (g) | 0.003 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 3000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.3@3VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba SSM6N16FE(TPL3,F) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
