N-channel Silicon MOSFET, dual configuration, surface mount with 6-pin ES package. Features 20V drain-source voltage, 0.1A continuous drain current, and ±10V gate-source voltage. Maximum gate threshold voltage is 1.1V, with 3000 mOhm drain-source resistance at 4V. Operates from -55°C to 150°C with 150mW maximum power dissipation.
PackageES
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N16FE(TPL3,F) technical specifications.
General
Package/Case
ES
Lead Shape
Flat
Pin Count
6
PCB
6
Package Length (mm)
1.6
Package Width (mm)
1.2
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Weight (g)
0.003
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Gate Threshold Voltage
1.1V
Maximum Drain Source Resistance
3000@4VmOhm
Typical Input Capacitance @ Vds
9.3@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM6N16FE(TPL3,F) Datasheet
Download the complete datasheet for Toshiba SSM6N16FE(TPL3,F) to view detailed technical specifications.
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