The SSM6N36FE(TE85L,F) is a 2 N-Channel FET with a maximum drain to source voltage of 20V and a continuous drain current of 500mA. It features an input capacitance of 46pF and a maximum power dissipation of 150mW. The device is packaged in a surface mount configuration and is available on cut tape. The SSM6N36FE(TE85L,F) is RoHS compliant.
Toshiba SSM6N36FE(TE85L,F) technical specifications.
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 46pF |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 630mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Toshiba SSM6N36FE(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
