Dual N-Channel MOSFET array, 30V Drain-to-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 4Ω Drain to Source Resistance (Rds On Max). Features 2 N-Channel FETs with a 1.5V Gate to Source Voltage (Vgs) and 8.5pF Input Capacitance. Operates within a temperature range of -55°C to 150°C, with a Max Power Dissipation of 150mW. Packaged in SOT-563-6 for surface mounting, supplied on tape and reel.
PackageSOT-563-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Toshiba SSM6N44FE,LM technical specifications.
General
Package/Case
SOT-563-6
Continuous Drain Current (ID)
100mA
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
1.5V
Input Capacitance
8.5pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4R
Turn-Off Delay Time
200ns
Turn-On Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Toshiba SSM6N44FE,LM Datasheet
Download the complete datasheet for Toshiba SSM6N44FE,LM to view detailed technical specifications.
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