Dual N-Channel MOSFET array, 30V Drain-to-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 4Ω Drain to Source Resistance (Rds On Max). Features 2 N-Channel FETs with a 1.5V Gate to Source Voltage (Vgs) and 8.5pF Input Capacitance. Operates within a temperature range of -55°C to 150°C, with a Max Power Dissipation of 150mW. Packaged in SOT-563-6 for surface mounting, supplied on tape and reel.
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Toshiba SSM6N44FE,LM technical specifications.
| Package/Case | SOT-563-6 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 1.5V |
| Input Capacitance | 8.5pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 50ns |
| RoHS | Compliant |
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