The SSM6N48FU,RF is a 2 N-Channel Junction Field-Effect Transistor (JFET) with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 100mA. It features a low drain to source resistance of 3.2 ohms and a maximum power dissipation of 300 milliwatts. The device is packaged in a surface mount SOT-363 package and is available on tape and reel. The operating temperature range is not specified, but the device is suitable for use in a variety of applications including audio and RF circuits.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Toshiba SSM6N48FU,RF technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2R |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15.1pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 3.2R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N48FU,RF Datasheet
Download the complete datasheet for Toshiba SSM6N48FU,RF to view detailed technical specifications.
No datasheet is available for this part.