N-Channel MOSFET featuring 30V drain-source voltage and 4A continuous drain current. This dual MOSFET offers a low Rds On of 84mR, ideal for efficient switching applications. With a 1V gate-source voltage threshold and 129pF input capacitance, it provides fast switching performance with 26ns turn-on and 9ns turn-off times. Surface mountable in a tape and reel package, this component is designed for high-density electronic circuits.
Toshiba SSM6N58NU,LF technical specifications.
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 112mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 1V |
| Input Capacitance | 129pF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 84mR |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 26ns |
| RoHS | Compliant |
No datasheet is available for this part.
