The SSM6N7002BFU,LF is a 2 N-Channel MOSFET from Toshiba with a maximum drain to source breakdown voltage of 60V and a continuous drain current of 200mA. It features a maximum power dissipation of 300mW and a maximum Rds on of 2.1 ohms. The device is packaged in a surface mount SOT-363 package and is available in a tape and reel format. The operating temperature range is not specified.
Toshiba SSM6N7002BFU,LF technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 17pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Rds On Max | 2.1R |
| RoHS | Compliant |
No datasheet is available for this part.
