N-channel enhancement mode silicon power MOSFET featuring dual configuration. This surface-mount transistor operates with a maximum drain-source voltage of 60V and a continuous drain current of 0.2A. Encased in a 6-pin SOT-363 (US) package, it offers a maximum power dissipation of 300mW and a minimum operating temperature of -55°C.
Sign in to ask questions about the Toshiba SSM6N7002FU(BRA) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba SSM6N7002FU(BRA) technical specifications.
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Input Capacitance @ Vds | 17@25VpF |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba SSM6N7002FU(BRA) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
