N-channel enhancement mode silicon power MOSFET featuring dual configuration. This surface-mount transistor operates with a maximum drain-source voltage of 60V and a continuous drain current of 0.2A. Encased in a 6-pin SOT-363 (US) package, it offers a maximum power dissipation of 300mW and a minimum operating temperature of -55°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N7002FU(BRA) technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
3000@10VmOhm
Typical Input Capacitance @ Vds
17@25VpF
Maximum Power Dissipation
300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba SSM6N7002FU(BRA) Datasheet
Download the complete datasheet for Toshiba SSM6N7002FU(BRA) to view detailed technical specifications.
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