P-channel enhancement mode MOSFET, surface mount, 6-pin US package (SOT-363) with dual configuration. Features 30V drain-source voltage, ±20V gate-source voltage, and 0.1A continuous drain current. Offers 12000 mOhm drain-source resistance at 4V and typical input capacitance of 9.1pF at 3V. Maximum power dissipation is 200mW, operating temperature range from -55°C to 150°C.
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| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Drain Source Resistance | 12000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.1@3VpF |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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