P-channel enhancement mode MOSFET, surface mount, 6-pin US package (SOT-363) with dual configuration. Features 30V drain-source voltage, ±20V gate-source voltage, and 0.1A continuous drain current. Offers 12000 mOhm drain-source resistance at 4V and typical input capacitance of 9.1pF at 3V. Maximum power dissipation is 200mW, operating temperature range from -55°C to 150°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6P15FU(TE85L,F) technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
12000@4VmOhm
Typical Input Capacitance @ Vds
9.1@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM6P15FU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM6P15FU(TE85L,F) to view detailed technical specifications.
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