The Toshiba TC58NVG1S3ETAI0 is a 2GB SLC NAND EEPROM with a density of 2Gb and a page size of 2112B. It features a TFSOP package and operates at a maximum supply voltage of 3.6V and a minimum supply voltage of 2.7V. The device is designed to operate within a temperature range of -40°C to 85°C and has a maximum operating current of 30mA. It is not radiation hardened and is not RoHS compliant.
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Toshiba TC58NVG1S3ETAI0 technical specifications.
| Access Time-Max | 25ns |
| Address Bus Width | 1b |
| Package/Case | TFSOP |
| Density | 2Gb |
| Height | 1mm |
| Interface | Serial, Parallel |
| Length | 18.4mm |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 2GB |
| Memory Type | EEPROM, , NAND, SLC NAND |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.7V |
| Mount | Surface Mount |
| Operating Supply Voltage | 3.3V |
| Packaging | Tray |
| Page Size | 2112B |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Supply Current | 30mA |
| Sync/Async | Synchronous |
| Width | 12.4mm |
| Word Size | 8b |
| RoHS | Not CompliantNo |
Download the complete datasheet for Toshiba TC58NVG1S3ETAI0 to view detailed technical specifications.
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