The Toshiba TD62002AP is a 7-element NPN bipolar junction transistor with a collector-emitter saturation voltage of 1.6V and a collector-emitter voltage rating of 50V. It is packaged in a plastic DIP-16 case and is suitable for through-hole mounting. The transistor operates over a temperature range of -40°C to 85°C. It is not RoHS compliant.
PackagePDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba TD62002AP technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Polarity | NPN |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TD62002AP Datasheet
Download the complete datasheet for Toshiba TD62002AP to view detailed technical specifications.
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