The Toshiba TD62006P(J) is a 14-pin PDIP NPN bipolar junction transistor with a maximum collector-emitter voltage of 22V and a maximum continuous DC collector current of 0.15A. It has a minimum DC current gain of 800 at 120mA and 2V. The transistor is packaged in a plastic dual in-line package with a seated plane height of 4.15mm and a pin pitch of 2.54mm. It is designed for through-hole mounting and has a maximum operating temperature of 75°C and a minimum operating temperature of -30°C.
PackagePDIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba TD62006P(J) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 14 |
| PCB | 14 |
| Package Length (mm) | 19.25 |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Seated Plane Height (mm) | 4.15 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001AA |
| Type | NPN |
| Configuration | Hex |
| Number of Elements per Chip | 6 |
| Maximum Collector-Emitter Voltage | 22V |
| Maximum Continuous DC Collector Current | 0.15A |
| Minimum DC Current Gain | 800@120mA@2V |
| Min Operating Temperature | -30°C |
| Max Operating Temperature | 75°C |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TD62006P(J) Datasheet
Download the complete datasheet for Toshiba TD62006P(J) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.