The Toshiba TD62064AP is a 4-element NPN bipolar junction transistor with a collector-emitter voltage rating of 50V and a saturation voltage of 1.6V. It is packaged in a 0.300 inch plastic DIP-16 package and is suitable for through-hole mounting. The transistor operates over a temperature range of -40°C to 85°C. Note that this device is not RoHS compliant.
PackagePDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba TD62064AP technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 4 |
| Polarity | NPN |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TD62064AP Datasheet
Download the complete datasheet for Toshiba TD62064AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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