NPN Darlington transistor array featuring a 50V collector-emitter voltage and 1.5A continuous DC collector current. This quad configuration, 16-pin PDIP package offers 2700mW maximum power dissipation and through-hole mounting. Key specifications include a minimum DC current gain of 800 (typical) at 1A/2V and 1500 (typical) at 0.25A/2V. Operating temperature range is -40°C to 85°C.
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Toshiba TD62064AP(J) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 16 |
| PCB | 16 |
| Package Length (mm) | 19.75(Max) |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Seated Plane Height (mm) | 4.15 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001BB |
| Type | NPN |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 1.5A |
| Maximum Power Dissipation | 2700mW |
| Maximum Collector-Emitter Saturation Voltage | 1.6@[email protected]|1.25@[email protected]V |
| Minimum DC Current Gain | 800(Typ)@1A@2V|1500(Typ)@0.25A@2V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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