Quad NPN Darlington transistor for through-hole mounting. Features 80V collector-emitter voltage, 1.5A continuous collector current, and 2700mW power dissipation. Housed in a 16-pin PDIP package with 2.54mm pin pitch. Offers a typical DC current gain of 1500 at 1.25A and 2V. Operates within a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62064BP1G(O,J) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN
Configuration
Quad
Number of Elements per Chip
4
Maximum Collector-Emitter Voltage
80V
Maximum Continuous DC Collector Current
1.5A
Maximum Power Dissipation
2700mW
Maximum Collector-Emitter Saturation Voltage
Minimum DC Current Gain
1500(Typ)@1.25A@2V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TD62064BP1G(O,J) Datasheet
Download the complete datasheet for Toshiba TD62064BP1G(O,J) to view detailed technical specifications.
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