The Toshiba TD62082AP is an NPN bipolar junction transistor with eight elements, a collector-emitter voltage rating of 50V, and a maximum operating temperature of 85°C. It is packaged in a PDIP-18 case and is intended for through-hole mounting. The transistor has a collector-emitter saturation voltage of 1.6V. It is not RoHS compliant.
Sign in to ask questions about the Toshiba TD62082AP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba TD62082AP technical specifications.
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 8 |
| Polarity | NPN |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for Toshiba TD62082AP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
