Octal common emitter NPN bipolar junction transistor (BJT) for through-hole mounting. Features 50V maximum collector-emitter voltage and 0.5A maximum continuous DC collector current. Offers a minimum DC current gain of 1000 at 350mA and 2V. Dissipates up to 1470mW, with saturation voltages of 1.1V at 100mA, 1.3V at 200mA, and 1.6V at 350mA. Housed in an 18-pin plastic dual in-line package (PDIP) with dimensions of 24.6mm x 6.4mm x 3.5mm. Operates within a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62083APG(J,S) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 18 |
| PCB | 18 |
| Package Length (mm) | 24.6 |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001AC |
| Type | NPN |
| Configuration | Octal Common Emitter |
| Number of Elements per Chip | 8 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Emitter Base Voltage | 30V |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Power Dissipation | 1470mW |
| Maximum Collector-Emitter Saturation Voltage | 1.1@100mA|1.3@200mA|1.6@350mAV |
| Minimum DC Current Gain | 1000@350mA@2V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TD62083APG(J,S) Datasheet
Download the complete datasheet for Toshiba TD62083APG(J,S) to view detailed technical specifications.
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