The Toshiba TD62308AFG(S,RI,EL is a quad NPN/PNP bipolar junction transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 1.5A. It has a maximum power dissipation of 1400mW and is packaged in a heat-sinked small outline package (HSOP) with 18 pins. The transistor is suitable for surface mount applications and has an operating temperature range of -40°C to 85°C.
PackageHSOP
MountingSurface Mount
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Technical Specifications
Toshiba TD62308AFG(S,RI,EL technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | HSOP |
| Package/Case | HSOP |
| Package Description | Heat Sinked Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 18 |
| PCB | 16 |
| Tab | 2Tab |
| Package Length (mm) | 13 |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 1.5A |
| Maximum Power Dissipation | 1400mW |
| Maximum Collector-Emitter Saturation Voltage | [email protected]|[email protected]V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TD62308AFG(S,RI,EL Datasheet
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