The Toshiba TD62783AFN(S,EL) is an octal common emitter bipolar junction transistor available in a shrink small outline package with 18 pins. It has a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 0.5A. The maximum power dissipation is 960mW. The transistor is suitable for surface mount applications and has a maximum operating temperature range of -40 to 85 degrees Celsius.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SSOP |
| Package Description | Shrink Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 18 |
| PCB | 18 |
| Package Length (mm) | 6.8(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.2 |
| Seated Plane Height (mm) | 1.5(Max) |
| Package Weight (g) | 0.09 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Octal Common Emitter |
| Number of Elements per Chip | 8 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Power Dissipation | 960mW |
| Maximum Collector-Emitter Saturation Voltage | 1.8@100mA|1.9@225mA|2@350mAV |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | S0562 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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