The Toshiba TD62783APG(J,S) is an NPN/PNP octal common emitter bipolar junction transistor in a plastic dual in-line package. It has 18 pins and a maximum power dissipation of 1470 milliwatts. The device is rated for a maximum continuous collector current of 0.5 amperes and can operate over a temperature range of -40 to 85 degrees Celsius. The transistor is mounted through a hole and is suitable for use in a variety of applications.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62783APG(J,S) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 18 |
| PCB | 18 |
| Package Length (mm) | 25.1(Max) |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Seated Plane Height (mm) | 4.15(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001AC |
| Type | NPN|PNP |
| Configuration | Octal Common Emitter |
| Number of Elements per Chip | 8 |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Power Dissipation | 1470mW |
| Maximum Collector-Emitter Saturation Voltage | 1.8@100mA|1.9@225mA|2@350mAV |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TD62783APG(J,S) Datasheet
Download the complete datasheet for Toshiba TD62783APG(J,S) to view detailed technical specifications.
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