TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-9D1B, 3 PIN, FET RF Power
Toshiba TIM8596-4 technical specifications.
| Continuous Drain Current (ID) | 5.2A |
| Gate to Source Voltage (Vgs) | -5V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
