The TJ10S04M3L(T6L1,NQ is a 40V N-Channel MOSFET with a continuous drain current of 10A. It is packaged in a TO-252-3 case and is suitable for surface mount applications. The device can operate over a temperature range of -55°C to 175°C and has a maximum power dissipation of 27W. The input capacitance is 930pF and the Rds on max is 44mΩ.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Toshiba TJ10S04M3L(T6L1,NQ technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 930pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 44mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TJ10S04M3L(T6L1,NQ Datasheet
Download the complete datasheet for Toshiba TJ10S04M3L(T6L1,NQ to view detailed technical specifications.
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