The TK100A06N1,S4X is a TO-220-3 packaged N-channel MOSFET from Toshiba, rated for 60V drain to source voltage and 100A continuous drain current. It features a maximum power dissipation of 45W and operates over a temperature range of -55°C to 150°C. The device has a maximum drain to source resistance of 2.2mR and a maximum Rds on of 2.7mR.
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Toshiba TK100A06N1,S4X technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 110ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
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