The Toshiba TK100A08N1,S4X is a TO-220-3 packaged N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 100A and a maximum power dissipation of 45W. The device features a drain to source resistance of 2.6mR and a gate to source voltage of 20V.
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Toshiba TK100A08N1,S4X technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 53ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
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