The TK12A60U(Q) is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 12A. It has a drain to source resistance of 400mR and a power dissipation of 35W. The device is packaged in a rail/through hole package and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C.
Toshiba TK12A60U(Q) technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
