N-channel MOSFET with 600V drain-source breakdown voltage and 12A continuous drain current. Features 400mΩ maximum drain-source on-resistance and 144W maximum power dissipation. Operates across a temperature range of -55°C to 150°C. This through-hole mounted component offers fast switching speeds with a 60ns turn-on delay and 8ns fall time. Housed in a TO-3PN package.
MountingThrough Hole
PolarityN-CHANNEL
Power144W
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Technical Specifications
Toshiba TK12J60U(F) technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19mm |
| Input Capacitance | 720pF |
| Length | 40.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 60ns |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK12J60U(F) Datasheet
Download the complete datasheet for Toshiba TK12J60U(F) to view detailed technical specifications.
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