The TK16J60W,S1VQ is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 600V and a continuous drain current of 15.8A. The device is packaged in a rail/tube format with 25 units per package. It is designed for high power dissipation applications, with a maximum power dissipation of 130W.
Capacitance1.35E-09F
MountingThrough Hole
PolarityN-CHANNEL
Power130W
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Technical Specifications
Toshiba TK16J60W,S1VQ technical specifications.
General
| Capacitance | 1.35E-09F |
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.35nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Rds On Max | 190mR |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK16J60W,S1VQ Datasheet
Download the complete datasheet for Toshiba TK16J60W,S1VQ to view detailed technical specifications.
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