The Toshiba TK16J60W,S1VQ(O MOSFET operates over a temperature range of -55°C to 150°C. It features a maximum power dissipation of 130W and a continuous drain current of 15.8A. The device has a fall time of 5ns and turn-on and turn-off delay times of 50ns and 100ns, respectively. It is mounted through a hole and has dimensions of 20mm in height, 15.5mm in length, and 4.5mm in width.
MountingThrough Hole
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Technical Specifications
Toshiba TK16J60W,S1VQ(O technical specifications.
General
| Continuous Drain Current (ID) | 15.8A |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20mm |
| Input Capacitance | 1.35nF |
| Length | 15.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK16J60W,S1VQ(O Datasheet
Download the complete datasheet for Toshiba TK16J60W,S1VQ(O to view detailed technical specifications.
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