N-channel silicon power MOSFET uses a super-junction DTMOS structure for switching voltage regulator applications. The device is rated for 600 V drain-source voltage and 20 A continuous drain current at Tc = 25 °C. Typical drain-source on-resistance is 0.13 Ω with a maximum of 0.155 Ω at 10 V gate drive and 10 A drain current. The through-hole TO-220SIS package has three pins, SC-67 JEITA designation, and typical weight of 1.7 g. The device supports 150 °C channel temperature and 2000 V RMS isolation voltage.
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Toshiba TK20A60W technical specifications.
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
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